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SQJ200EP-T1_GE3
- Delenummer:
- SQJ200EP-T1_GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET 2N-CH 20V 20A/60A PPAK SO
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17297 Pieces
- Dataark:
- SQJ200EP-T1_GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SQJ200EP-T1_GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SQJ200EP-T1_GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2V @ 250µA |
|---|---|
| Leverandør Enhetspakke: | PowerPAK® SO-8 Dual Asymmetric |
| Serie: | Automotive, AEC-Q101, TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 8.8 mOhm @ 16A, 10V |
| Strøm - Maks: | 27W, 48W |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | PowerPAK® SO-8 Dual |
| Andre navn: | SQJ200EP-T1_GE3TR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 18 Weeks |
| Produsentens varenummer: | SQJ200EP-T1_GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 975pF @ 10V |
| Gateavgift (Qg) (Maks) @ Vgs: | 18nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funksjonen: | Standard |
| Utvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET 2N-CH 20V 20A/60A PPAK SO |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 20A, 60A |
| Email: | [email protected] |
Beslektede deler til SQJ200EP-T1_GE3
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