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TH58BYG2S3HBAI6
- Delenummer:
- TH58BYG2S3HBAI6
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- IC EEPROM 4GBIT 25NS 67FBGA
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14102 Pieces
- Dataark:
- TH58BYG2S3HBAI6.pdf
Introduksjon
BYCHIPS er strømprodusenten for TH58BYG2S3HBAI6, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for TH58BYG2S3HBAI6 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Forsyning: | 1.7 V ~ 1.95 V |
|---|---|
| Leverandør Enhetspakke: | 67-VFBGA (6.5x8) |
| Hastighet: | 25ns |
| Serie: | Benand™ |
| emballasje: | Tray |
| Pakke / tilfelle: | 67-VFBGA |
| Andre navn: | TH58BYG2S3HBAI6JDH TH58BYG2S3HBAI6YCL |
| Driftstemperatur: | -40°C ~ 85°C (TA) |
| Vannfølsomhetsnivå (MSL): | 3 (168 Hours) |
| Minnetype: | Non-Volatile |
| Minnestørrelse: | 4Gb (512M x 8) |
| Minneformat: | EEPROM |
| Produsentens varenummer: | TH58BYG2S3HBAI6 |
| Interface: | Parallel |
| Beskrivelse: | IC EEPROM 4GBIT 25NS 67FBGA |
| Email: | [email protected] |
Beslektede deler til TH58BYG2S3HBAI6
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