Kjøpe TK12E80W,S1X med BYCHPS
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TK12E80W,S1X
- Delenummer:
- TK12E80W,S1X
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 800V 11.5A TO220-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14482 Pieces
- Dataark:
- TK12E80W,S1X.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 570µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-220 |
| Serie: | DTMOSIV |
| Rds På (Maks) @ Id, Vgs: | 450 mOhm @ 5.8A, 10V |
| Strømdissipasjon (maks): | 165W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 |
| Andre navn: | TK12E80W,S1X(S TK12E80WS1X |
| Driftstemperatur: | 150°C |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | TK12E80W,S1X |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1400pF @ 300V |
| Gateavgift (Qg) (Maks) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 11.5A TO220-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 11.5A (Ta) |
| Email: | [email protected] |
Beslektede deler til TK12E80W,S1X
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