Kjøpe TK39J60W5,S1VQ med BYCHPS
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TK39J60W5,S1VQ
- Delenummer:
- TK39J60W5,S1VQ
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N CH 600V 38.8A TO-3P(N)
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14814 Pieces
- Dataark:
- TK39J60W5,S1VQ.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.7V @ 1.9mA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-3P(N) |
| Serie: | DTMOSIV |
| Rds På (Maks) @ Id, Vgs: | 65 mOhm @ 19.4A, 10V |
| Strømdissipasjon (maks): | 270W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-3P-3, SC-65-3 |
| Andre navn: | TK39J60W5,S1VQ(O TK39J60W5S1VQ |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 16 Weeks |
| Produsentens varenummer: | TK39J60W5,S1VQ |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 4100pF @ 300V |
| Gateavgift (Qg) (Maks) @ Vgs: | 135nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | Super Junction |
| Utvidet beskrivelse: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N) |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N CH 600V 38.8A TO-3P(N) |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 38.8A (Ta) |
| Email: | [email protected] |
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