Kjøpe TK58E06N1,S1X med BYCHPS
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TK58E06N1,S1X
- Delenummer:
- TK58E06N1,S1X
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N CH 60V 58A TO-220
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 13413 Pieces
- Dataark:
- TK58E06N1,S1X.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 500µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-220 |
| Serie: | U-MOSVIII-H |
| Rds På (Maks) @ Id, Vgs: | 5.4 mOhm @ 29A, 10V |
| Strømdissipasjon (maks): | 110W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 |
| Andre navn: | TK58E06N1,S1X(S TK58E06N1S1X |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | TK58E06N1,S1X |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 3400pF @ 30V |
| Gateavgift (Qg) (Maks) @ Vgs: | 46nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N CH 60V 58A TO-220 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 58A (Ta) |
| Email: | [email protected] |
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