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TK6A80E,S4X
- Delenummer:
- TK6A80E,S4X
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 800V TO220SIS
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19282 Pieces
- Dataark:
- TK6A80E,S4X.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 600µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | TO-220SIS |
| Serie: | π-MOSVIII |
| Rds På (Maks) @ Id, Vgs: | 1.7 Ohm @ 3A, 10V |
| Strømdissipasjon (maks): | 45W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-220-3 Full Pack, Isolated Tab |
| Andre navn: | TK6A80E,S4X(S TK6A80ES4X |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | TK6A80E,S4X |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 1350pF @ 25V |
| Gateavgift (Qg) (Maks) @ Vgs: | 32nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V TO220SIS |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 6A (Ta) |
| Email: | [email protected] |
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