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IPD65R650CEATMA1
- Delenummer:
- IPD65R650CEATMA1
- Beskrivelse:
- MOSFET N-CH 650V 10.1A TO252
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16414 Pieces
- Dataark:
- IPD65R650CEATMA1.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 0.21mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO252-3 |
| Serie: | CoolMOS™ |
| Rds På (Maks) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Strømdissipasjon (maks): | 86W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | SP001295798 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | IPD65R650CEATMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 440pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | Super Junction |
| Utvidet beskrivelse: | N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3 |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 10.1A TO252 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 10.1A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPD65R650CEATMA1
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