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IPI086N10N3GXKSA1
- Delenummer:
- IPI086N10N3GXKSA1
- Beskrivelse:
- MOSFET N-CH 100V 80A TO262-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 20660 Pieces
- Dataark:
- IPI086N10N3GXKSA1.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 75µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO262-3 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 8.6 mOhm @ 73A, 10V |
| Strømdissipasjon (maks): | 125W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navn: | IPI086N10N3 G IPI086N10N3 G-ND IPI086N10N3G SP000485982 SP000683070 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 14 Weeks |
| Produsentens varenummer: | IPI086N10N3GXKSA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 3980pF @ 50V |
| Gateavgift (Qg) (Maks) @ Vgs: | 55nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3 |
| Drivspenning (Maks. Rds På, Min Rds På): | 6V, 10V |
| Drain til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 80A TO262-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
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