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IPS110N12N3GBKMA1
- Delenummer:
- IPS110N12N3GBKMA1
- Beskrivelse:
- MOSFET N-CH 120V 75A TO251-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18930 Pieces
- Dataark:
- IPS110N12N3GBKMA1.pdf
Introduksjon
BYCHIPS er strømprodusenten for IPS110N12N3GBKMA1, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IPS110N12N3GBKMA1 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 83µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO251-3 |
| Serie: | OptiMOS™ |
| Rds På (Maks) @ Id, Vgs: | 11 mOhm @ 75A, 10V |
| Strømdissipasjon (maks): | 136W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-251-3 Stub Leads, IPak |
| Andre navn: | IPS110N12N3 G IPS110N12N3 G-ND IPS110N12N3GBKMA1TR-ND SP000674456 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | IPS110N12N3GBKMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 4310pF @ 60V |
| Gateavgift (Qg) (Maks) @ Vgs: | 65nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3 |
| Drain til Source Voltage (VDSS): | 120V |
| Beskrivelse: | MOSFET N-CH 120V 75A TO251-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 75A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPS110N12N3GBKMA1
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