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IPD80R1K4CEATMA1
- Delenummer:
- IPD80R1K4CEATMA1
- Beskrivelse:
- MOSFET N-CH 800V 3.9A TO252-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17075 Pieces
- Dataark:
- IPD80R1K4CEATMA1.pdf
Introduksjon
BYCHIPS er strømprodusenten for IPD80R1K4CEATMA1, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for IPD80R1K4CEATMA1 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.9V @ 240µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO252-3 |
| Serie: | CoolMOS™ |
| Rds På (Maks) @ Id, Vgs: | 1.4 Ohm @ 2.3A, 10V |
| Strømdissipasjon (maks): | 63W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | IPD80R1K4CEATMA1-ND IPD80R1K4CEATMA1TR SP001130972 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 6 Weeks |
| Produsentens varenummer: | IPD80R1K4CEATMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 570pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3 |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 3.9A TO252-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 3.9A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPD80R1K4CEATMA1
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