Kjøpe RN1910FE(T5L,F,T) med BYCHPS
Kjøp med garanti
RN1910FE(T5L,F,T)
- Delenummer:
- RN1910FE(T5L,F,T)
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS 2NPN PREBIAS 0.1W ES6
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 13461 Pieces
- Dataark:
- RN1910FE(T5L,F,T).pdf
Introduksjon
BYCHIPS er strømprodusenten for RN1910FE(T5L,F,T), vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for RN1910FE(T5L,F,T) via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Leverandør Enhetspakke: | ES6 |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | - |
| Motstand - Base (R1) (Ohms): | 4.7k |
| Strøm - Maks: | 100mW |
| emballasje: | Cut Tape (CT) |
| Pakke / tilfelle: | SOT-563, SOT-666 |
| Andre navn: | RN1910FE(T5LFT)CT |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | RN1910FE(T5L,F,T) |
| Frekvens - Overgang: | 250MHz |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| Beskrivelse: | TRANS 2NPN PREBIAS 0.1W ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Gjeldende - Samler Cutoff (Maks): | 100nA (ICBO) |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
Beslektede deler til RN1910FE(T5L,F,T)
| Bilde | Delenummer | produsenter | Beskrivelse | Utsikt |
|---|---|---|---|---|
 |
RN1911FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Forespørsel |
 |
RN1906(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | Forespørsel |
|
RN1910FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Forespørsel |
|
RN1910,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W US6 | Forespørsel |
|
RN1911(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W US6 | Forespørsel |
|
RN4981,LF(CT | Toshiba Semiconductor and Storage | TRANS NPN/PNP PREBIAS 0.2W US6 | Forespørsel |
 |
BCR148SE6433HTMA1 | Infineon Technologies | TRANS 2NPN PREBIAS 0.25W SOT363 | Forespørsel |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers