Kjøpe RN1910FE,LF(CT med BYCHPS
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RN1910FE,LF(CT
- Delenummer:
- RN1910FE,LF(CT
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS 2NPN PREBIAS 0.1W ES6
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 18732 Pieces
- Dataark:
- RN1910FE,LF(CT.pdf
Introduksjon
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spesifikasjoner
| Spenning - Samler Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Metning (Maks) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Leverandør Enhetspakke: | ES6 |
| Serie: | - |
| Motstand - Emitter Base (R2) (Ohms): | - |
| Motstand - Base (R1) (Ohms): | 4.7k |
| Strøm - Maks: | 100mW |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | SOT-563, SOT-666 |
| Andre navn: | RN1910FE,LF(CB RN1910FELF(CTTR |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 16 Weeks |
| Produsentens varenummer: | RN1910FE,LF(CT |
| Frekvens - Overgang: | 250MHz |
| Utvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| Beskrivelse: | TRANS 2NPN PREBIAS 0.1W ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Gjeldende - Samler Cutoff (Maks): | 100nA (ICBO) |
| Nåværende - Samler (Ic) (Maks): | 100mA |
| Email: | [email protected] |
Beslektede deler til RN1910FE,LF(CT
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