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SI3475DV-T1-GE3
- Delenummer:
- SI3475DV-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET P-CH 200V 0.95A 6-TSOP
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17989 Pieces
- Dataark:
- SI3475DV-T1-GE3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 6-TSOP |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 1.61 Ohm @ 900mA, 10V |
| Strømdissipasjon (maks): | 2W (Ta), 3.2W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | SOT-23-6 Thin, TSOT-23-6 |
| Andre navn: | SI3475DV-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI3475DV-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 500pF @ 50V |
| Gateavgift (Qg) (Maks) @ Vgs: | 18nC @ 10V |
| FET Type: | P-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP |
| Drain til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET P-CH 200V 0.95A 6-TSOP |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 950mA (Tc) |
| Email: | [email protected] |
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