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SI4511DY-T1-E3
- Delenummer:
- SI4511DY-T1-E3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N/P-CH 20V 7.2A 8-SOIC
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19664 Pieces
- Dataark:
- SI4511DY-T1-E3.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 1.8V @ 250µA |
|---|---|
| Leverandør Enhetspakke: | 8-SO |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 14.5 mOhm @ 9.6A, 10V |
| Strøm - Maks: | 1.1W |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navn: | SI4511DY-T1-E3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens varenummer: | SI4511DY-T1-E3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | - |
| Gateavgift (Qg) (Maks) @ Vgs: | 18nC @ 4.5V |
| FET Type: | N and P-Channel |
| FET-funksjonen: | Logic Level Gate |
| Utvidet beskrivelse: | Mosfet Array N and P-Channel 20V 7.2A, 4.6A 1.1W Surface Mount 8-SO |
| Drain til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N/P-CH 20V 7.2A 8-SOIC |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 7.2A, 4.6A |
| Email: | [email protected] |
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