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SIE882DF-T1-GE3
- Delenummer:
- SIE882DF-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 25V 60A POLARPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19076 Pieces
- Dataark:
- SIE882DF-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIE882DF-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIE882DF-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.2V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | 10-PolarPAK® (L) |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 1.4 mOhm @ 20A, 10V |
| Strømdissipasjon (maks): | 5.2W (Ta), 125W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | 10-PolarPAK® (L) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 24 Weeks |
| Produsentens varenummer: | SIE882DF-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 6400pF @ 12.5V |
| Gateavgift (Qg) (Maks) @ Vgs: | 145nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
| Drain til Source Voltage (VDSS): | 25V |
| Beskrivelse: | MOSFET N-CH 25V 60A POLARPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIE882DF-T1-GE3
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