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SIR412DP-T1-GE3
- Delenummer:
- SIR412DP-T1-GE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 25V 20A PPAK SO-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 19462 Pieces
- Dataark:
- SIR412DP-T1-GE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIR412DP-T1-GE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIR412DP-T1-GE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (maks): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PowerPAK® SO-8 |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 12 mOhm @ 10A, 10V |
| Strømdissipasjon (maks): | 3.9W (Ta), 15.6W (Tc) |
| emballasje: | Original-Reel® |
| Pakke / tilfelle: | PowerPAK® SO-8 |
| Andre navn: | SIR412DP-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 24 Weeks |
| Produsentens varenummer: | SIR412DP-T1-GE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 600pF @ 10V |
| Gateavgift (Qg) (Maks) @ Vgs: | 16nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 25V 20A (Tc) 3.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SO-8 |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 25V |
| Beskrivelse: | MOSFET N-CH 25V 20A PPAK SO-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 20A (Tc) |
| Email: | [email protected] |
Beslektede deler til SIR412DP-T1-GE3
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