Kjøpe SIRA20DP-T1-RE3 med BYCHPS
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SIRA20DP-T1-RE3
- Delenummer:
- SIRA20DP-T1-RE3
- Produsent:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CHAN 25V POWERPAK SO-8
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 17099 Pieces
- Dataark:
- SIRA20DP-T1-RE3.pdf
Introduksjon
BYCHIPS er strømprodusenten for SIRA20DP-T1-RE3, vi har aksjene for umiddelbar frakt og også tilgjengelig for lang leveringstid. Vennligst send oss din kjøpsplan for SIRA20DP-T1-RE3 via e-post, vil vi gi deg en best pris i henhold til planen din.
spesifikasjoner
| Vgs (th) (Maks) @ Id: | 2.1V @ 250µA |
|---|---|
| Vgs (maks): | +16V, -12V |
| Teknologi: | MOSFET (Metal Oxide) |
| Serie: | TrenchFET® |
| Rds På (Maks) @ Id, Vgs: | 0.58 mOhm @ 20A, 10V |
| Strømdissipasjon (maks): | 6.25W (Ta), 104W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | PowerPAK® SO-8 |
| Andre navn: | SIRA20DP-RE3 SIRA20DP-T1-RE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 19 Weeks |
| Produsentens varenummer: | SIRA20DP-T1-RE3 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 10850pF @ 10V |
| Gateavgift (Qg) (Maks) @ Vgs: | 200nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount |
| Drivspenning (Maks. Rds På, Min Rds På): | 4.5V, 10V |
| Drain til Source Voltage (VDSS): | 25V |
| Beskrivelse: | MOSFET N-CHAN 25V POWERPAK SO-8 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 81.7A (Ta), 100A (Tc) |
| Email: | [email protected] |
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