Kjøpe TK8Q65W,S1Q med BYCHPS
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TK8Q65W,S1Q
- Delenummer:
- TK8Q65W,S1Q
- Produsent:
- Toshiba Semiconductor
- Beskrivelse:
- MOSFET N-CH 650V 7.8A IPAK
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 14737 Pieces
- Dataark:
- TK8Q65W,S1Q.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.5V @ 300µA |
|---|---|
| Vgs (maks): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | I-Pak |
| Serie: | DTMOSIV |
| Rds På (Maks) @ Id, Vgs: | 670 mOhm @ 3.9A, 10V |
| Strømdissipasjon (maks): | 80W (Tc) |
| emballasje: | Tube |
| Pakke / tilfelle: | TO-251-3 Stub Leads, IPak |
| Andre navn: | TK8Q65W,S1Q(S TK8Q65WS1Q |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 12 Weeks |
| Produsentens varenummer: | TK8Q65W,S1Q |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 570pF @ 300V |
| Gateavgift (Qg) (Maks) @ Vgs: | 16nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-Pak |
| Drivspenning (Maks. Rds På, Min Rds På): | 10V |
| Drain til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 7.8A IPAK |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 7.8A (Ta) |
| Email: | [email protected] |
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