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IPD80R2K8CEATMA1
- Delenummer:
- IPD80R2K8CEATMA1
- Beskrivelse:
- MOSFET N-CH 800V 1.9A TO252-3
- Lead Free Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgjengelig mengde:
- 16961 Pieces
- Dataark:
- IPD80R2K8CEATMA1.pdf
Introduksjon
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spesifikasjoner
| Vgs (th) (Maks) @ Id: | 3.9V @ 120µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Enhetspakke: | PG-TO252-3 |
| Serie: | CoolMOS™ CE |
| Rds På (Maks) @ Id, Vgs: | 2.8 Ohm @ 1.1A, 10V |
| Strømdissipasjon (maks): | 42W (Tc) |
| emballasje: | Tape & Reel (TR) |
| Pakke / tilfelle: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navn: | SP001130970 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Vannfølsomhetsnivå (MSL): | 1 (Unlimited) |
| Produsentens Standard Lead Time: | 6 Weeks |
| Produsentens varenummer: | IPD80R2K8CEATMA1 |
| Inputkapasitans (Ciss) (Maks) @ Vds: | 290pF @ 100V |
| Gateavgift (Qg) (Maks) @ Vgs: | 12nC @ 10V |
| FET Type: | N-Channel |
| FET-funksjonen: | - |
| Utvidet beskrivelse: | N-Channel 800V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3 |
| Drain til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 1.9A TO252-3 |
| Strøm - Kontinuerlig avløp (Id) @ 25 ° C: | 1.9A (Tc) |
| Email: | [email protected] |
Beslektede deler til IPD80R2K8CEATMA1
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